A novel SEU tolerant memory cell for space applications

抄録

In this paper, an improved design of a radiation hardened memory cell (RHMC), based on the SEU (single event upset) physics mechanism and reasonable transistor size, is proposed. The memory cell can enhance the reliability for space radiation environment, which also can offer differential read operation for robust sensing. With the help of 90 nm standard digital CMOS technology, the simulation demonstrates that the proposed radiation hardened memory cell has the ability to recover an SEU in any one sensitive node and provides multiple-node upsets protection. The comparisons for previous several hardened memory cell are also executed, which shows the proposed memory cell keeps advantages of low power and high stability.