IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
The impact of heat loss paths on the electrothermal models of self-heating effects in nanoscale tri-gate SOI MOSFETs
Yali SuJunhua LaiFeng Liang
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JOURNAL FREE ACCESS

2018 Volume 15 Issue 24 Pages 20180905

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Abstract

Nanoscale tri-gate SOI MOSFETs attract much attention in terms of the significance of self-heating effects (SHEs) which severely influence the operation stability and device reliability. Here, the impacts of the heat loss paths associated with the SHEs in nanoscale tri-gate SOI MOSFETs are comprehensively analyzed considering the gate dissipation channels (GDCs). The thermal resistance network model and thermal resistance model are presented to illustrate the heat dissipation mechanisms. 3D electro-thermal TCAD simulation results show that the heat flux through the GDCs occupies most part of the total heat dissipation. The static peak temperature can be decreased by decreasing the gate oxide thickness and increasing the cross-section of Fin area of tri-gate devices.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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