An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD

Abstract

Thermal characterization with static test method [1], which utilizes I − V characteristics of power semiconductor devices to estimate junction temperature (T_J), has attracted attention for high density power conversion system design. However, the dynamic gate threshold voltage shift distorts T_J estimation for SiC MOSFET. This paper evaluates time response of T_J with junction voltage (V_J) for the developed SiC MOSFET, which embeds Schottky barrier diode (SBD) in this structure. This sophisticated structure enables to get accurate time response of T_J for SiC MOSFET, and hence to design dynamic thermal characteristics of power modules with SiC MOSFET.