IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer
Xin XieHuilong ZhuMengying ZhangDawei BiZhiyuan HuZhengxuan ZhangShichang Zou
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2019 年 16 巻 21 号 p. 20190454

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By skillfully applying the voltage bias, we firstly observed radiation-enhanced channel length modulation (CLM) of main transistor in 130 nm partially-depleted SOI nMOSFETs. And we found the radiation-enhanced CLM under Pass-Gate bias is more severe than that under ON bias, which reveals that the radiation-induced positive trapped charges in buried oxide is more responsible for this effect. A partially full depletion model is used to interpret this effect. And a TCAD simulation was used to verify our model. Good agreement between simulation and experiment is demonstrated.

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© 2019 by The Institute of Electronics, Information and Communication Engineers
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