Characterization of P-hit and N-hit single-event transient using heavy ion microbeam

Abstract

P-hit and N-hit single-event transients are investigated using heavy ion microbeam. A novel layout placement was implemented in the test chip to distinguish SETs originating from P-hit and N-hit. Experimental results indicate both the P-hit and N-hit SETs show an exponential-like distribution in all target circuits. The SET cross sections and the average pulse width for P-hit and N-hit are also investigated. The well process, the transistor size and the layout topology significantly impact on the cross sections. Only the transistor size impacts on the average pulse width at low LET.