A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

Zhu Hongyue; Cheng Xinhong; Xia Yifei; Xu Dawei; Liu Tiantian; Zhang Zhenwei

doi:10.1587/elex.17.20200019

LETTER

A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

Zhu Hongyue, Cheng Xinhong, Xia Yifei, Xu Dawei, Liu Tiantian, Zhang Zhenwei

著者情報

Zhu Hongyue
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Center of Materials Science and Optoelectronics Engineering, the University of Chinese Academy of Sciences
Cheng Xinhong
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xia Yifei
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Center of Materials Science and Optoelectronics Engineering, the University of Chinese Academy of Sciences
Xu Dawei
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Liu Tiantian
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Center of Materials Science and Optoelectronics Engineering, the University of Chinese Academy of Sciences
Zhang Zhenwei
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Center of Materials Science and Optoelectronics Engineering, the University of Chinese Academy of Sciences

キーワード: blanking time, IGBT, de-saturation short-circuit protection

ジャーナルフリー

2020 年 17 巻 11 号 p. 20200019

DOI https://doi.org/10.1587/elex.17.20200019

Browse “Advance online publication” version

詳細

抄録

This paper proposed a self-adaptive blanking time (SABT) circuit for fast IGBT de-saturation short-circuit detection. When IGBT normally turns on or experiences fault under load (FUL), the blanking time is implemented by detecting the variation of IGBT collector-to-emitter voltage V_CE. While when IGBT is under hard switching failure (HSF), the blanking time is determined by detecting gate voltage V_GE. The simulation with the UMC 0.6µm 700V technology indicates that the proposed SABT circuit can quickly detect FUL and HSF. Compared to the conventional blanking time circuit, the SABT circuit can shorten the fault detection time of FUL from 1.3µs to 35.3ns, while the fault detection time of HSF condition is reduced from 2.329µs to 294ns.

責任著者(Corresponding author)

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