A transformer matching X-band MMIC power amplifier with temperature compensation technique on 0.25µm GaN process

抄録

This work presents a transformer matching X band MMIC power amplifier (PA) on gallium nitride (GaN) process. A port impedance modeling-based transformer design method is proposed and analyzed. The method simplifies the transformer matching network design process, improves matching impedance accuracy, and relieves designer’s burden. A novel compact temperature compensation (TC) circuit is also used in this design. The PA design on the 0.25µm MMIC GaN technology process, and occupies 1.594mm² area. At a 28V supply, the gain and output power of PA reaches 15dB and 29dBm respectively. Additionally, the designed TC circuit stabilizes PA current consumption from temperature variation. From -55 to 85°C, the PA current consumption stability improves by more than 60% by using the proposed TC bias circuit.