Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide

Abstract

In 3-D charge trap (CT) NAND flash memory, program/erase (P/E) cycling tests are performed, and the degradation of cell characteristics is investigated. The mechanism of mid-gap voltage (V_mg) shift difference between erased state and programmed state is presented and it is verified by technology computer-aided design (TCAD) simulation configured identically to the real device. TCAD simulation also makes it possible to extract the trap density through the current fitting. Generation of interface traps (N_it) and bulk traps in the tunneling oxide (N_ot) has the form of a power-law of the number of P/E cycles. Furthermore, it is experimentally found that the degradation of cell characteristics is mainly caused by hole tunneling current from the poly-silicon channel during erase operation.