IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
A new active pixel structure with a pinned photodiode for wide dynamic range image sensors
Jong-Ho ParkShoji KawahitoYasuo Wakamori
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2005 Volume 2 Issue 18 Pages 482-487

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Abstract

A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the conventional linear-log wide DR image sensor with pinned photo diode.

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© 2005 by The Institute of Electronics, Information and Communication Engineers
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