IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Global modeling of microwave three terminal active devices using the FDTD method
O. El. MrabetM. EssaaidiM'hamed Drissi
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JOURNALS FREE ACCESS

2005 Volume 2 Issue 2 Pages 43-48

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Abstract

This paper presents a new approach for the global electromagnetic analysis of the three-Terminal active linear and nonlinear microwave circuits using the Finite-Difference Time Domain (FDTD) Method. Here, we have updated the both electric field components on the three - terminal active device by correlating the voltage and current with its impedance. This approach is applied to the analysis of a linear amplifier which includes a three-terminal active MESFET device. Simulations results are in good agreement with those of the commercial tool.

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© 2005 by The Institute of Electronics, Information and Communication Engineers
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