Research on the optimal width and optimal life value of IGBT unilateral local lifetime control

抄録

In order to explore the improvement of IGBT devices with high performance and low loss by unilateral local lifetime control, this paper uses Sentaurus TCAD simulation to compare the effects of overall and unilateral local lifetime control on the performance of insulated gate bipolar transistor. The results show that the unilateral local lifetime control achieves a good compromise in the characteristics of IGBT, especially when the lifetime control area is close to the N-buffer layer, the overall performance of IGBT is the most superior. Further research on unilateral localized lifetime control shows that by reducing the minority carrier lifetime and increasing the width of the lifetime control region at the same time, the turn-off loss of the device can be reduced, but the on-state voltage drop can also be increased. When the width of the one-sided local lifetime control region is 20µm and the minority carrier lifetime is 15ns, the relationship between the two can be well balanced, which provides a reference for the design and optimization of IGBT.