Single event effect mechanism study in 130nm fully depleted SOI technology devices

Rui Chen; Ziyu Wang; Sai Li; Jianwei Han; Yanan Liang; Qian Chen; Shipeng Shangguan; Runjie Yuan

doi:10.1587/elex.21.20240434

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Single event effect mechanism study in 130nm fully depleted SOI technology devices

Rui Chen, Ziyu Wang, Sai Li, Jianwei Han, Yanan Liang, Qian Chen, Shipeng Shangguan, Runjie Yuan

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Keywords: silicon on insulator (SOI), single event transient (SET), Technical Computer Aided Design (TCAD), heavy ion, single event upset (SEU)

JOURNAL FREE ACCESS

2024 Volume 21 Issue 19 Pages 20240434

DOI https://doi.org/10.1587/elex.21.20240434

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Abstract

The Single-event Transient (SET) pulses triggered at the drain of NMOS with T-gate at various striking positions after heavy-ion striking are studied using Technical Computer Aided Design (TCAD) simulation based on the 130nm Fully Depleted Silicon on insulator (SOI) technology. Based on this technology, we design Flip-Flop chain circuits with different gate widths and gate lengths. The heavy ion irradiation experiment of the device is carried out.

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