Simultaneous galvanic insulation and gate voltage transfer for high-voltage power semiconductor operation using resonant inductive wireless power transfer

抄録

This paper discusses a design methodology for achieving both galvanic insulation and gate voltage transfer for high-voltage power semiconductor using resonant inductive wireless power transfer. In the proposed approach, both control and power signals are transmitted simultaneously via magnetically coupled coils. The minimum required separation distance between the coils to ensure adequate insulation is first evaluated through electromagnetic field simulations, considering the system’s high-voltage requirements. Subsequently, analyses using the proposed gate drive circuit are conducted for coils of various geometries and sizes. At a given amplitude for both the control and high-frequency power signals, the maximum allowable transfer distance is analyzed to determine the conditions under which the gate-drive voltage required for the power-side SiC MOSFET can be reliably achieved. Furthermore, the influence of coil geometry — such as winding type, turn count, and physical dimensions — on system performance is examined to identify configurations that optimize coupling efficiency and minimize losses.