A reverse conducting BRT (RC-BRT) with high dV/dt immunity suitable for pulse power applications

抄録

This paper proposes a Reverse Conducting Base Resistance-controlled Thyristor with P-body region (P-RC-BRT), which has high dV/dt immunity and achieves blocking at zero gate voltage. The characteristics of P-RC-BRT were compared with the conventional BRT and RC-BRT, and the pulse discharge characteristics of devices with different circuit parameters were analyzed, which were as high as 6208 A and 130.8 kA/μs. The dV/dt immunity of the devices was studied comparatively, the P-RC-BRT has higher dV/dt immunity.