IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
A 10.0Gb/s all-active LVDS receiver in 0.18µm CMOS technology
Panduka Wijetunga
著者情報
ジャーナル フリー

2006 年 3 巻 10 号 p. 216-220

詳細
抄録
Results for a 10.0Gb/s all-active LVDS receiver, designed using active bandwidth improvement strategies, are presented. The generalized model generated for the active peak load shows that the transfer characteristic of the load is similar to that of inductive shunt peaking, and can achieve bandwidth improvements comparable to that of on-chip inductive shunt peaking without the associated area penalty. The measured 3dB bandwidth of the transceiver is 6.0GHz, and the input sensitivity (BER < 10-13) at 10.0Gb/s and 11.0Gb/s are 80mVpp and 100mVpp respectively. The total transceiver power consumption, including the 50Ω source terminated output driver, is 60mW.
著者関連情報
© 2006 by The Institute of Electronics, Information and Communication Engineers
前の記事
feedback
Top