抄録
A theoretical prediction of beyond-THz frequency operation is demonstrated for a III-nitride heterojunction FET with a gate length of sub-100nm. The calculation is based upon an ensemble Monte Carlo simulation coupled with a 2D Poisson equation. The simulation results suggest that a current gain cutoff frequency of more than 1THz is achieved by an AlInN/InN/AlInN or AlInN/InGaN/AlInN double-heterojunction FET with a gate length of less than 50nm or 30nm, respectively, which are fabricated on a non-polar GaN substrate. The importance of high-mobility InN and InGaN used as a channel material for high-speed and high-frequency applications is numerically verified.
