抄録
Simulation results are provided for the modified nanoscale Field Effect Diode (FED) used as a variable gain amplifier in automatic gain control systems. Field Effect Diode is similar to regular MOS transistors with the exception of using two gates over the channel region and oppositely doped source and drain. Its current-voltage characteristic results in large gain, low power dissipation and better frequency response compared with automatic gain control systems based on regular CMOS transistors. An added feature is the lack of short channel effects in Field Effect Diodes.
