抄録
In this paper, a novel CMOS charge pump with substantially improved immunity to latch-up is presented. By utilizing a dedicated bulk pumping and blocking (DBPB) technique, the proposed charge pump achieves greatly reduced forward voltage of source/drain-substrate junction of transistors, resulting in decreased charge loss and increased latch-up immunity. Comparison results indicated that the maximum bulk forward voltage of the proposed charge pump was less than 0.05V (88% improvement) for zero output current during power-up, and less than 0.12V (88% improvement) regardless of the amount of output current during ordinary pumping operation.
