抄録
New charge pump circuits with high current drivability in low supply voltage are proposed. It generates a large gate-overdrive voltage of charge transfer MOSFET by pulling down the gate node voltage by deliberate leakage. A proper clock circuit is also presented to effectively suppress accompanied loss effects. The characteristics of the proposed charge pumps were investigated through simulation and measurement of fabricated circuit. The measurement result shows an excellent pumping performance especially under the condition of heavy load current.
