IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Memory cell using Modified Field Effect Diode
Mina AmirmazlaghaniFarshid Raissi
Author information
JOURNALS FREE ACCESS

2009 Volume 6 Issue 22 Pages 1582-1586

Details
Abstract

Using spice 9.3, we have modeled (I-V) characteristics of a Modified Field Effect Diode (M-FED) with gate length of 75nm and oxide thickness of 10nm. An SRAM cell (Register) has been designed with the simulated M-FED and has been compared to an SOI-MOSFET based circuit. Simulation results demonstrate that clock frequency applied to a memory cell which is designed with M-FED is more than 2 orders of magnitude larger than that of a comparable SOI-MOSFET, while the access time of the M-FED based memory cell is three orders of magnitude less than the comparable SOI-MOSFET.

Information related to the author
© 2009 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top