IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Intense photoluminescence from erbium-doped tantalum oxide thin films deposited by sputtering
Mayank Kumar SinghGenjoh FusegiKazusa KanoJaspal Parganram BangeKenta MiuraOsamu Hanaizumi
Author information
JOURNALS FREE ACCESS

2009 Volume 6 Issue 23 Pages 1676-1682

Details
Abstract

Erbium-doped tantalum oxide films were prepared by radio-frequency magnetron sputtering. Visible light emission was observed from the films after annealing. We obtained PL peaks at 550 and 670nm. The effects of erbium concentration, annealing temperature, and annealing time on the light-emitting properties of the films are discussed. The strongest intensities of the 550 and 670nm peaks were observed from the samples with 0.96 and 0.63mol% erbium concentrations after annealing at 900°C for 20min, respectively.

Information related to the author
© 2009 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top