IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
A Look-ahead Active Body-biasing scheme for SOI-SRAM with dynamic VDDM control
Kayoko SetoMasaaki IijimaTetsuya HiroseMasahiro NumaAkira TadaTakashi Ipposhi
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JOURNALS FREE ACCESS

2009 Volume 6 Issue 8 Pages 456-460

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Abstract

Instability of SRAM memory cells derived from aggressive technology scaling has become one of the most significant issues. Although lowering the supply voltage for a memory cell (VDDM) improves a write margin, which increases the access time. In this paper, we propose a memory cell employing a Look-ahead Active Body-biasing (LAB) scheme for SOI-SRAM with the dynamic VDDM control. Simulation results have shown that the proposed SRAM cell shortens the access time by 54% in the write mode, while expanding read and write margins and reducing effects of variations in the threshold voltage on them.

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© 2009 by The Institute of Electronics, Information and Communication Engineers
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