120-Gb/s NRZ-DQPSK signal generation by a thin-lithium-niobate-substrate modulator

Atsushi Kanno; Takahide Sakamoto; Akito Chiba; Tetsuya Kawanishi; Kaoru Higuma; Masaaki Sudou; Junichiro Ichikawa

doi:10.1587/elex.7.817

LETTER

120-Gb/s NRZ-DQPSK signal generation by a thin-lithium-niobate-substrate modulator

Atsushi Kanno, Takahide Sakamoto, Akito Chiba, Tetsuya Kawanishi, Kaoru Higuma, Masaaki Sudou, Junichiro Ichikawa

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Keywords: optical modulator, phase-shift-keying, quadrature-phase-shift-keying, LiNbO₃

JOURNAL FREE ACCESS

2010 Volume 7 Issue 11 Pages 817-822

DOI https://doi.org/10.1587/elex.7.817

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Abstract

A high-speed DQPSK optical modulator is fabricated with a thin lithium niobate substrate. Decrease in the propagation loss of electrodes and a low half-wave voltage, which can be realized by fabrication of a ridge-type optical waveguide structure, can help achieve 120-Gb/s (60-Gbaud) NRZ-DQPSK modulation with full electrical-time-division-multiplexing technique.

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