抄録
The authors developed SiC power module with large rated current by connecting multiple SiC MOSFETs in parallel. This paper characterizes and evaluates its high switching frequency operation performance by comparing it with the conventional Si IGBT module. First, the static current-voltage characteristics and terminal capacitance-voltage characteristics are evaluated. Then, the switching behavior of the SiC power module is experimentally evaluated in the DC-DC boost converter circuit. The results clarified the superiority of the developed SiC power module for fast switching capability and low switching loss.
