IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures
Sahar OhadiRahim FaezHamid Reza Hoseini
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2010 Volume 7 Issue 19 Pages 1447-1452

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Abstract

InAlAs/InGaAs/InP high electron mobility transistors have higher mobility comparing to structures without indium. But existence of indium causes smaller Eg and as a result smaller breakdown voltage. However, increasing percentage of indium results in higher mobility and as a result higher current and transconductance. Therefore decreasing percentage of indium causes higher breakdown voltage at the sometime lower transconductance. One of the most important parameters that limit maximum output power of transistor is breakdown voltage. In this paper, InAlAs/InGaAs/InP HEMTs with different structures are simulated and a structure with a good transconductance and breakdown voltage is introduced.

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© 2010 by The Institute of Electronics, Information and Communication Engineers
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