IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
An SOI bulk-micromachined dual SPDT RF-MEMS switch by layer-wise separation design of waveguide and switching mechanism
Daisuke YamaneWinston SunHarunobu SeitaShigeo KawasakiHiroyuki FujitaHiroshi Toshiyoshi
Author information
JOURNALS FREE ACCESS

2010 Volume 7 Issue 2 Pages 80-85

Details
Abstract

A compact monolithic RF-MEMS switch (2mm × 4mm in area) with the dual single-pole-double-throw (SPDT) configuration was developed by using the SOI bulk micromachining technique. The electrostatic comb-drive actuators and the mechanically movable coplanar waveguides were implemented on the low-resistive active SOI layer and the high-resistive handle layer, respectively, to effectively allocate the device footprint. Electrical crosstalk between the waveguide and the electrostatic actuator was suppressed by using the buried silicon dioxide layer. At a driving voltage of 35V, the switch exhibits an insertion loss of 3dB and isolation of 30dB at 12GHz.

Information related to the author
© 2010 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top