Abstract
A large-signal FET model for the simulation and design of switching-mode high-efficiency power amplifiers (PAs) is presented. The proposed nonlinear model is constructed by accurately characterizing the ON and OFF behaviors of the active FET device, along with its parameter extraction associated with the specific regions. The robustness of the model in predicting the switching-mode operation of on-wafer GaN-based HEMTs is demonstrated by experimental results. Moreover, the model has been employed for designing an inverse Class-F PA using a commercial high-power GaN HEMT. Good agreement between amplifier simulation and measurement proves the validity of the proposed large-signal model.
