5GHz band low phase noise Si-CMOS oscillator using FBAR

Shoichi Tanifuji; Tuan Thanh Ta; Suguru Kameda; Tadashi Takagi; Kazuo Tsubouchi

doi:10.1587/elex.7.165

LETTER

5GHz band low phase noise Si-CMOS oscillator using FBAR

Shoichi Tanifuji, Tuan Thanh Ta, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

Author information

Keywords: film bulk acoustic resonator (FBAR), 5GHz, 90nm silicon complementary metal oxide semiconductor (Si-CMOS), low phase noise, oscillator

JOURNAL FREE ACCESS

2010 Volume 7 Issue 3 Pages 165-169

DOI https://doi.org/10.1587/elex.7.165

Details

Abstract

In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.

Corresponding author

Register with J-STAGE for free!