7-Gb/s monolithic photoreceiver fabricated with 0.25-µm SiGe BiCMOS technology

Abstract

We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10^-10 at -1dBm incident optical power.