IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
7-Gb/s monolithic photoreceiver fabricated with 0.25-µm SiGe BiCMOS technology
Jin-Sung YounMyung-Jae LeeKang-Yeob ParkHolger RückerWoo-Young Choi
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2010 Volume 7 Issue 9 Pages 659-665

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Abstract

We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10-10 at -1dBm incident optical power.

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© 2010 by The Institute of Electronics, Information and Communication Engineers
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