IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Performance enhancement techniques for CMOS power amplifier
To-Po Wang
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2011 Volume 8 Issue 12 Pages 969-977

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Abstract

In this paper, performance enhancement techniques for CMOS power amplifier (PA) are proposed. First, a small inductor is inserted between the common-gate transistors of a triple-cascode stage (PA unit) for improving the power-added efficiency (PAE). Moreover, cross-coupled pairs are utilized in the PA circuit to raise the gain. Furthermore, these additional cross-coupled transistors can boost the PAE and saturated output power (Psat) of the PA. Based on these methods, a K-band PA has been designed in 0.18-µm RF CMOS process. Simulated results confirm these methods applied to this PA can effectively improve the performance in terms of gain, Psat, and PAE.

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© 2011 by The Institute of Electronics, Information and Communication Engineers
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