2011 Volume 8 Issue 20 Pages 1710-1715
To reduce the contact resistance between the silicides and source/drain diffusion regions in scaled MOSFETs, the contact resistivity of barrier height controlled PtxHf1-xSi to heavily doped Si was investigated by the cross-bridge Kelvin resistor method for the first time. PtxHf1-xSi was formed from the in-situ deposited Pt(8-12nm)/Hf(2-8nm)/Si(100) stacked structures followed by the 400°C/60min silicidation in N2 ambient. The obtained Schottky barrier height (SBH) for electron was 0.53eV in Pt0.6Hf0.4Si/n-Si(100), while the SBH for hole in Pt0.9Hf0.1Si/p-Si(100) was 0.26eV, respectively. The contact resistivities of 2×10-7Ωcm2 for Pt0.6Hf0.4Si/n+-Si(100) and 7.1×10-8Ωcm2 for Pt0.9Hf0.1Si/p+-Si(100) were achieved even for the minimum contact area of 4µm2.