Abstract
This paper describes a meshless method with wavelet-based nodes for the two-dimensional time-dependent simulation of semiconductor devices. In this method the solution is approximated using global radial basis functions (RBF) and distributed wavelet-generated points. This allows the computation of problems with complex-shaped boundaries and forming fine and coarse points abundance in locations where variable solutions change rapidly and slowly, respectively. The method is suitable for the semiconductor part of very time consuming global modeling of microwave/millimeter wave circuits due to a large reduction of number of nodes with an acceptable results.
