抄録
This paper presents an RFID chip for 13.56-MHz band communication fabricated on a glass substrate by using amorphous In-Ga-Zn-O thin-film transistors. Low driving-voltage logic circuits were achieved with a small Vth, a high field effect mobility of 15cm2/Vs and “active load” inverters that had small consumption currents. The RFID tag was successively driven by 13.56-MHz wireless input.
