IEICE Electronics Express
Online ISSN : 1349-2543
A 40-nm 256-Kb Half-Select Resilient 8T SRAM with Sequential Writing Technique
S. YoshimotoM. TeradaS. OkumuraT. SuzukiS. MiyanoH. KawaguchiM. Yoshimoto
Author information
Keywords: SRAM, 8T, disturb, half-select
JOURNALS FREE ACCESS

2012 Volume 9 Issue 12 Pages 1023-1029

Details
Abstract

This paper introduces a novel half-select resilient dual write wordline 8T (DW8T) SRAM with a sequential writing technique. The dual write wordlines are sequentially activated in a write cycle, and its combination with the half-VDD precharge suppresses the half-select problem. We implemented a 256-Kb DW8T SRAM and a half-VDD generator with a 40-nm CMOS process. The measurement results of the seven samples show that the proposed DW8T SRAM achieves a VDDmin of 600mV and improves the average VDDmin by 367mV compared to the conventional 8T SRAM. The measured leakage power can be reduced by 25%.

Information related to the author
© 2012 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top