抄録
This paper introduces a novel half-select resilient dual write wordline 8T (DW8T) SRAM with a sequential writing technique. The dual write wordlines are sequentially activated in a write cycle, and its combination with the half-VDD precharge suppresses the half-select problem. We implemented a 256-Kb DW8T SRAM and a half-VDD generator with a 40-nm CMOS process. The measurement results of the seven samples show that the proposed DW8T SRAM achieves a VDDmin of 600mV and improves the average VDDmin by 367mV compared to the conventional 8T SRAM. The measured leakage power can be reduced by 25%.
