IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Reading and writing operations of memory device in micro-electromechanical resonator
Atsushi YaoTakashi Hikihara
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2012 Volume 9 Issue 14 Pages 1230-1236

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Abstract
Micro-electromechanical resonators substantially exhibit bistable and hysteretic response when nonlinear characteristics appear. Badzey et al. reported that the nonlinear micro-electromechanical resonators can be used as a mechanical 1bit memory. Based on their results, the authors propose reading and writing operations of the memory device. The reading and writing operations imply a displacement measurement and a switching of two stable periodic vibrations, respectively. In this paper, we realize a displacement measurement along an approach avoiding supplemented sensors. In addition, we achieve the switching operation between two coexisting periodic states by a displacement feedback control.
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© 2012 by The Institute of Electronics, Information and Communication Engineers
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