A CMOS 4.6ppm/°C curvature-compensated bandgap voltage reference

Shubin Liu; Zhangming Zhu; Huaxi Gu; Minjie Liu; Lianxi Liu; Yintang Yang

doi:10.1587/elex.9.1617

Shubin Liu, Zhangming Zhu, Huaxi Gu, Minjie Liu, Lianxi Liu, Yintang Yang

著者情報

キーワード: CMOS, voltage reference, subthreshold, high-order curvature -compensation, high PSRR, self-cascode transistor

ジャーナルフリー

2012 年 9 巻 20 号 p. 1617-1623

DOI https://doi.org/10.1587/elex.9.1617

詳細

抄録

A novel high precision high order curvature-compensated bandgap reference (BGR) is presented in this paper designed using the subthreshold current of self-cascode transistors in standard digital 0.18µm CMOS process. Simultaneously its temperature coefficient is typically 4.6ppm/°C in the temperature range of -25 to 120°C with a supply current of 17.25µA. A power supply rejection ratio (PSRR) of -51dB is achieved while the layout area is no more than 0.0022mm².

責任著者(Corresponding author)

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