Theoretical analysis of the damping effect on a transistor laser

抄録

The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7×10¹⁷cm³), as well as for a maximum modulation bandwidth of 45GHz.