抄録
Diamond is considered to be the most promising wide band gap semiconductor material for the fabrication of power switching devices with respect to the figure of merit. The authors have developed a high voltage and high current diamond Schottky barrier diode (SBD). This paper evaluates the static and dynamic electrical performance of the developed diamond SBD as a power switching device. The experimental results obtained under different operating conditions validate the fast switching, unipolar device characteristics, and high temperature operation capability of the developed diamond SBD.
