IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
A 32-bit 16-program-cycle nonvolatile memory for analog circuit calibration in a standard 0.18µm CMOS
Jun Gyu LeeShoichi Masui
Author information
JOURNALS FREE ACCESS

2012 Volume 9 Issue 6 Pages 477-483

Details
Abstract

We propose a 32-bit 16-program-cycle nonvolatile memory fabricated in a standard 0.18µm CMOS technology based on a channel hot-electron trapping at the transistor gate sidewall. Its target application is calibration of RF/analog circuits for multiband/multimode communication systems, that demands in-field multiple-time programmability and data select-ability. The issue of the one-time programmability in the proposed memory cell is overcome by the addressing memory cell array, and the promised reliability is observed through the optimization of program and restore operations. The developed nonvolatile memory is applied to a dual-band PLL synthesizer with an area overhead of 8.5%.

Information related to the author
© 2012 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top