IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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A 6-32GHz T/R switch in 0.18-µm CMOS technology
Sen WangZi-Kang Li
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2012 年 9 巻 6 号 p. 590-595

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This paper presents a broadband single-pole double-throw (SPDT) transmit/receive (T/R) switch implemented in a standard 0.18-µm CMOS technology. The switch uses a grounded inductor, transistors in deep n-type wells, resistive body-floating components, a negative control voltage, and lowpass networks to improve its insertion losses, power-handling capabilities, and isolation. Moreover, the switch featuring a bandpass response results from the grounded inductor and the lowpass networks. To select T/R modes, the control voltage is under ±1.8-V operation. The insertion loss, input return loss, return loss, and isolation of the switch are 2.7±0.4dB, >14.3dB, >10.2dB, and>32.8dB from 6GHz to 32GHz, respectively. The input P1dB is 22.6±1.6dBm at the frequencies of interest.
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© 2012 by The Institute of Electronics, Information and Communication Engineers
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