IEICE Electronics Express
Online ISSN : 1349-2543
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Comparison of LNAs fabricated in 65-nm CMOS GP and LP processes for the Square Kilometre Array
Leonid Belostotski
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JOURNALS FREE ACCESS

2012 Volume 9 Issue 7 Pages 636-641

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Abstract

In this work two 0.7-1.4GHz room-temperature 65nm CMOS low noise amplifiers (LNAs), designed for the Square Kilometre Array (SKA) radio telescope receiver, are compared. One LNA was fabricated with low-power (LP) transistors whereas the other, otherwise identical LNA, was fabricated with general-purpose (GP) transistors. As shown there are electrical and noise performance differences between the two circuits. The GP-LNA achieves better noise temperatures (∼22K) at the upper band edge whereas the LP-LNA has a higher gain. The GP-LNA is a marginally better option for the SKA due to better S11 and lower noise temperatures at the upper frequency range.

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© 2012 by The Institute of Electronics, Information and Communication Engineers
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