IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

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A compact quadrature coupler on GaAs IPD process for LTE applications
Hamhee JeonNam Young Kim
著者情報
キーワード: GaAs, IPD, Quadrature coupler
ジャーナル フリー 早期公開

論文ID: 10.20130386

この記事には本公開記事があります。
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抄録
A compact quadrature coupler — using intertwined mutual inductors by the proposed GaAs integrated passive device (IPD) process — is developed by considering the quality factor of inductor and minimum insertion loss for the long term evolution (LTE) applications. At the center frequency of LTE bands 5 and 8, the quadrature coupler achieved -3.45 dB of insertion loss S21 and -3.43 dB of coupling S41 with less than 0.65 degrees of phase error over the frequency range. The reflection coefficient S11 and the isolation S31 are -24.32 dB and -23.45 dB, respectively. This coupler can be usable for a compact quadrature 3-dB divider/combiner as partial component of a balanced power amplifier.
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© 2013 by The Institute of Electronics, Information and Communication Engineers
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