IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

Millimeter-wave Transmission Line with Through-silicon Via for RF-MEMS Devices
Shinpei OgawaTakeshi YuasaYoshio FujiiYukihiro TaharaHiroshi Fukumoto
Author information
JOURNAL FREE ACCESS Advance online publication

Article ID: 10.20130565

Details
Abstract
We designed and fabricated a low-loss transmission line structure with through-silicon vias (TSVs) for use in the millimeter-wave region for three-dimensional packaging of radio frequency microelectromechanical system devices. High-frequency simulations were used to determine the optimum transmission line structure. A transformer was employed to compensate for the impedance mismatch between the TSVs and the coplanar waveguide. The proposed structure was fabricated using a combination of surface micromachining and the molten solder ejection method. The electrical properties of the TSVs and the transmission line were measured, and a low insertion loss of 0.7 dB at 80 GHz was achieved.
Content from these authors
© 2013 by The Institute of Electronics, Information and Communication Engineers
feedback
Top