Abstract
A new low-power Tx FIR driver has been developed targeting for LPDDR4 applications. Both conventional and proposed Tx FIR drivers are designed in 130 nm CMOS process and their performances are compared. The proposed 4 Gb/s FIR driver improves the vertical and horizontal eye-opening by 64.9% and 89.2%, each respectively, at -14.2 dB of channel loss at Nyquist rate and consumes only 370 µA from 1.2 V supply. An low-dropout (LDO) and Op amp blocks to generate the medium DC voltages of pre-emphasis waveform use 500 µA. The entire Tx FIR driver scheme consumes ≤0.9 mA and occupies 0.0017 mm2 only.
