抄録
To provide a high EMI resisting Local Interconnection Network (LIN) transmitter, a novel structure with an error feedback amplifier composed of low input impedance transconductance amplifier was proposed. The circuit was fabricated in 0.5µm 60V BCD process and was simulated hiring the standard IEC62132-4: Direct Power Injection (DPI) method. Simulation result showed that the performance of the duty cycle satisfied the requirement under the condition of superimposing more than 5W Electromagnetic interference (EMI) ranged from 150 KHz to 1 GHz onto LIN bus.
