A CMOS semi-distributed step attenuator with low insertion loss and low phase distortion

Yanlong Zhang; Yiqi Zhuang; Zhenrong Li; Hongyun Li; Xing Quan; Bo Wang; Xiaojiao Ren

doi:10.1587/elex.11.20140394

This article has now been updated. Please use the final version.

A CMOS semi-distributed step attenuator with low insertion loss and low phase distortion

Yanlong Zhang, Yiqi Zhuang, Zhenrong Li, Hongyun Li, Xing Quan, Bo Wang, Xiaojiao Ren

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Keywords: attenuator, step attenuator, insertion loss, phase distortion, CMOS

JOURNAL FREE ACCESS Advance online publication

Article ID: 11.20140394

DOI https://doi.org/10.1587/elex.11.20140394

The final version of this article is now available: Vol. 11 (2014), No. 12 pp. 20140394-20140394

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Abstract

A semi-distributed step attenuator with low insertion loss and low phase distortion is presented with 0.18μm BiCMOS process, which is implemented with a step distributed attenuator for 0–7 dB attenuation with low insertion loss and two π-type switched resistive attenuators for large attenuation amplitude. The proposed attenuator has a maximum attenuation range of 0–31dB with 1dB-increase at the frequency range of 10–20 GHz and involves less than 8.6dB of insertion loss. The RMS amplitude error and insertion phase at each attenuation state are less than 0.6dB and 3°, respectively.

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