Article ID: 12.20150349
A symmetric tunnel field-effect transistor (S-TFET) was recently proposed as an alternative device to address power density issues, featuring steep switching characteristic and bi-directional current flow with its symmetric structure. Because 193-nm immersion lithography is paired up with double or multiple patterning techniques for further enhancement of patterning resolution, the effect of double-patterning and double-etching (2P2E)-induced gate line-edge roughness (LER) [versus single-patterning and single-etching (1P1E)] on the S-TFET is investigated with various device design parameters. Finally, an investigation is conducted on the physical reasons which give rise to the difference in the LER parameters for 2P2E and 1P1E technique.
