A single-electron hysteretic inverter designed for enhancement of stochastic resonance

Abstract

To improve stochastic resonance in a single-electron (SE) device, we propose an SE device having hysteretic characteristics. We first demonstrate by analyzing a mathematical model that the correlation coefficient between the subthreshold input and the inverter output is improved by introducing hysteresis into an ideal inverter (NOT gate). To realize hysteresis in an SE inverter, we have designed an SE device having hysteretic characteristics (2ID-FJI) by combining two input discretizers (IDs) and an SE four-junction inverter (FJI). Evaluations of the correlation coefficients prove that the 2ID-FJI can achieve a significant improvement in stochastic resonance.