DICE-Based Test Structure to Measure the Strength of Charge Sharing Effect

Abstract

With the technology scaling, the charge sharing effect is becoming more prominent. Using the property of DICE latch, we present a DICE-based test structure to measure the strength of charge sharing effect. Three-dimensional TCAD simulations are done to simulate the DICE property. And a test chip is fabricated by the commercial 65nm bulk CMOS process to verify our proposed test structure. Heavy-ion experiment results indicate that this test structure is efficient to obtain the strength of charge sharing effect.